powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 1 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q 60v 175c n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) i d t a = + 25c 6 0 v 8 . 0 m? @ v gs = 10 v 16.5a description and applications this mosfet is designed to meet the stringent requirements of automotive applicat ions. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? motor control ? dc - dc converters ? power management features and benefits ? thermally efficient package - cooler running applications ? high conversion efficiency ? low r ds( on ) C minimi zes on state losses ? low input capacitance ? fast switching speed ? <1.1mm package profile C ideal for t hin applications ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high r eliability ? ppap capable (note 4) mechanical data ? case: powerdi5060 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin a nnea led over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 97 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm n h 6008 s ps q - 13 powerdi5060 - 8 2 , 500 / tape & reel note s: 1 . eu direc tive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions.html . 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic powerdi5060 - 8 pin1 s d d g d d s s n h 6008s s s s s g d d d d yy ww =manufacturer green d s g
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 2 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss ? gs = 10 v steady state t a = +25c t a = + 10 0c i d 16.5 11.7 a steady state t c = +25c t c = + 10 0c i d 88 63 a pulsed drain curren t ( 380 dm 140 a maximum continuous body diode f orward cur rent (note 7 ) i s 9 0 a avalanche current (note 8 ) l= 0. 1mh i as 62 a avalanche energy (note 8 ) l= 0. 1mh e as 194 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) p d 1.6 w thermal resistance, junction to ambien t (note 6 ) s teady state r ? ja 95 c/w total power dissipation (note 7 ) p d 3.3 w thermal resistance, junction to ambient (note 7) s teady state r ? ja 46 c/w thermal resistance, junction to case (note 7 ) r ? j c 1.6 operating and storage temperature range t j, t stg - 55 to +1 75 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss 6 0 gs = 0v, i d = 250 a zero gate voltage drain current i d ss a v ds = 48 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 9 ) gate threshold voltage v gs( th) 2 ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? gs = 10 v, i d = 2 0 a diode forward voltage v sd gs = 0v, i s = 1 a dynamic characte ristics (note 10 ) input capacitance c iss ds = 3 0 v, v gs = 0v f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 10 v ) q g ? d d = 30 v, i d = 20 a total gate charge ( v gs = 4.5 v ) q g gs gd d( on ) d d = 30v, v gs = 10 v, r g = 1 ? d = 20 a turn - on rise time t r d( off ) f rr f = 20 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 6 . device mounted on fr - 4 pc board, with minimum recommende d pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 8 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject to product testing.
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 3 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) f igure 1. typical output characteristic v gs = 3.5v v gs = 4.0v v gs = 10.0v v gs = 5.0v v gs = 4.5v 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 0 5 10 15 20 25 30 35 40 45 50 r ds(on) , drain - source on - resistance (m d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10v 0 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 20a 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0 5 10 15 20 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature - 55 25 85 150 125 v gs = 10v 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with temperature v gs = 10v, i d = 20a 0 5 10 15 20 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55 25 85 125 150 175
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 4 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 10v, i d = 20a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 150 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 175 o c t a = 125 o c 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 10 20 30 40 v gs (v) q g (nc) figure 12. gate charge v ds = 30v, i d = 20a 0 0.5 1 1.5 2 2.5 3 3.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 45 50 55 60 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10. typical drain - source leakage current vs. voltage 25 85 150 125 175
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 5 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 1.6 d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area p w =10ms p w =100 s r ds(on) limited p w =1ms p w =100ms t j(max) = 175 t c = 25 single pulse dut on infinite heatsink v gs = 10v p w =1s p w =10 s p w =1 s
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 6 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.5 1 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. powerdi506 0 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
powerdi is a registered tr ademark of diodes incorporated. dm nh6008s ps q document number: ds 38 772 rev. 1 - 2 7 of 7 www.diodes.com april 2016 ? di odes incorporated dm nh6008s ps q important notice diodes incorporated makes no wa rranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incor porated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other change s without further notice to this document and any product described herein. diodes incorporated does not assume any liability a risi ng out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products descri bed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices o r systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signi ficant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related require ments concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furth er, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 20 16 , diodes incorporated www. diodes.com
|
